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| PD - 97227 PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability IRFB4228PBF Key Parameters 150 180 12 170 175 D VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100C TJ max D V V m: A C G S G D S TO-220AB D S G Gate Drain Source Description This HEXFET(R) Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Absolute Maximum Ratings Parameter VGS ID @ TC = 25C ID @ TC = 100C IDM IRP @ TC = 100C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Repetitive Peak Current g Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) Typ. --- 0.50 --- Max. 0.45 --- 62 N Units C/W Max. 30 83 59 330 170 330 170 2.2 -40 to + 175 Units V A W W/C C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case f Case-to-Sink, Flat, Greased Surface Junction-to-Ambient f Notes through are on page 8 www.irf.com 1 06/26/06 IRFB4228PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgd tst EPULSE Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Drain Charge Shoot Through Blocking Time Energy per Pulse Min. 150 --- --- 3.0 --- --- --- --- --- 170 --- --- 100 --- --- Typ. Max. Units --- 150 12 --- -14 --- --- --- --- --- 72 26 --- 58 110 4530 550 100 480 4.5 7.5 --- --- 15 5.0 --- 20 1.0 100 -100 --- 110 --- --- --- --- --- --- --- --- --- nH --- pF ns J S nC Conditions VGS = 0V, ID = 250A V mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 33A e V mV/C A mA nA VDS = 150V, VGS = 0V VDS = 150V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 25V, ID = 50A VDD = 120V, ID = 50A, VGS = 10Ve VDD = 120V, VGS = 15V, RG= 5.1 L = 220nH, C= 0.3F, VGS = 15V VDS = 120V, RG= 5.1, TJ = 25C L = 220nH, C= 0.3F, VGS = 15V VDS = 120V, RG= 5.1, TJ = 100C VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 0V to 120V Between lead, 6mm (0.25in.) from package and center of die contact G S D VDS = VGS, ID = 250A Ciss Coss Crss Coss eff. LD LS Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance --- --- --- --- --- --- Avalanche Characteristics Parameter Typ. Max. Units mJ mJ V A EAS EAR VDS(Avalanche) IAS Single Pulse Avalanche Energyd Repetitive Avalanche Energy c Repetitive Avalanche Voltage Avalanche Current d c --- --- 180 --- 120 33 --- 50 Diode Characteristics Parameter IS @ TC = 25C Continuous Source Current (Body Diode) ISM VSD trr Qrr Pulsed Source Current (Body Diode) c Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- --- --- 76 230 330 1.3 110 350 V ns nC Min. --- Typ. Max. Units --- 83 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 50A, VGS = 0V e TJ = 25C, IF = 50A, VDD = 50V di/dt = 100A/s e 2 www.irf.com IRFB4228PBF 1000 TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V ID, Drain-to-Source Current (A) 10 BOTTOM ID, Drain-to-Source Current (A) 100 100 BOTTOM 1 5.0V 0.1 10 5.0V 60s PULSE WIDTH Tj = 25C 0.01 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) 1 0.1 1 60s PULSE WIDTH Tj = 175C 10 100 1000 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 Fig 2. Typical Output Characteristics 3.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 50A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ID, Drain-to-Source Current (A) VGS = 10V 100 T J = 175C 10 T J = 25C 1 VDS = 25V 60s PULSE WIDTH 0.1 3 4 5 6 7 8 9 10 11 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C) Fig 3. Typical Transfer Characteristics 120 110 100 Energy per Pulse (J) VGS, Gate-to-Source Voltage (V) Fig 4. Normalized On-Resistance vs. Temperature 120 Energy per Pulse (J) 90 80 70 60 50 40 30 20 85 L = 220nH C = 0.3F 100C 25C 110 100 90 80 70 60 50 40 30 20 10 L = 220nH C = Variable 100C 25C 90 95 100 105 110 115 120 125 60 65 70 75 80 85 90 95 100 105 www.irf.com Fig 5. Typical EPULSE vs. Drain-to-Source Voltage VDS, Drain-to-Source Voltage (V) Fig 6. Typical EPULSE vs. Drain Current ID, Peak Drain Current (A) 3 IRFB4228PBF 140 L = 220nH 120 1000 ISD, Reverse Drain Current (A) Energy per Pulse (J) 100 80 60 40 20 0 20 40 60 80 100 120 140 160 C = 0.1F C = 0.3F 100 T J = 175C 10 T J = 25C C = 0.2F 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) Temperature (C) Fig 7. Typical EPULSE vs.Temperature 100000 VGS = 0V, f = 1 MHZ Ciss = C gs + C gd, C ds SHORTED Coss = Cds + C gd Fig 8. Typical Source-Drain Diode Forward Voltage 12.0 ID= 50A VGS, Gate-to-Source Voltage (V) Crss = C gd 10.0 8.0 6.0 4.0 2.0 0.0 10000 C, Capacitance (pF) Ciss 1000 Coss Crss VDS= 120V VDS= 75V VDS= 30V 100 10 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0 10 20 30 40 50 60 70 80 QG, Total Gate Charge (nC) Fig 9. Typical Capacitance vs.Drain-to-Source Voltage 90 80 70 ID, Drain Current (A) Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) 60 50 40 30 20 10 0 25 50 75 100 125 150 175 T J , Junction Temperature (C) 100 100sec 10msec 1msec 10 Tc = 25C Tj = 175C Single Pulse 1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Safe Operating Area 4 www.irf.com IRFB4228PBF RDS(on) , Drain-to -Source On Resistance ( m) 60 ID = 50A 50 40 30 20 10 0 4 6 8 10 12 14 16 18 T J = 125C EAS , Single Pulse Avalanche Energy (mJ) 500 ID TOP 13A 20A BOTTOM 50A 400 300 200 100 T J = 25C 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 13. On-Resistance vs. Gate Voltage 5.0 VGS(th) , Gate Threshold Voltage (V) VGS, Gate -to -Source Voltage (V) Fig 14. Maximum Avalanche Energy vs. Temperature 250 ton= 1s Duty cycle = 0.25 Half Sine Wave Square Pulse 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) 0 25 50 75 100 Repetitive Peak Current (A) 200 ID = 250A 150 100 50 125 150 175 Case Temperature (C) Fig 15. Threshold Voltage vs. Temperature 1 Fig 16. Typical Repetitive peak Current vs. Case temperature Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) J J 1 R1 R1 2 R2 R2 R3 R3 3 C 3 Ri (C/W) i (sec) 0.0852 0.000052 0.1882 0.1769 0.000980 0.008365 1 2 Ci= i/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB4228PBF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - - + RG * * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD ** + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01 I AS Fig 19a. Unclamped Inductive Test Circuit Current Regulator Same Type as D.U.T. Fig 19b. Unclamped Inductive Waveforms Id Vds 50K 12V .2F .3F Vgs D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform 6 www.irf.com IRFB4228PBF A RG DRIVER L C PULSE A VCC B PULSE B RG Ipulse DUT tST Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms Fig 21c. EPULSE Test Waveforms www.irf.com 7 IRFB4228PBF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information @Y6HQG@) UCDTADTA6IADSA A GPUA8P9@A &'( 6TT@H7G@9APIAXXA (A! DIAUC@A6TT@H7GAGDI@AA8A Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqAAArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S 96U@A8P9@ @6SAA2A! X@@FA ( GDI@A8 TO-220AB packages are not recommended for Surface Mount Application. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.096mH, RG = 25, IAS = 50A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. Half sine wave with duty cycle = 0.25, ton=1sec. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/06 8 www.irf.com |
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